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VISHAY
TLM.200.
Vishay Semiconductors
Low Current MiniLED
Description
The new low current MiniLED Series have been designed in a small white SMT package. The feature of the device is the very small package 2.3 mm x 1.3 mm x 1.4 mm and the low forward current. The MinLED is an obvious solution for small-scale, highpower products that are expected to work reliability in an arduous environment. This is often the case in automotive and industrial application.
16906
Features
* SMD LEDs with exceptional brightness Luminous intensity categorized Compatible with automatic placement equipment IR reflow soldering Available in 8 mm tape Low profile package Non-diffused lens: Excellent for coupling to light pipes and backlighting * Low power consumption * Luminous intensity ratio in one packing unit IVmax/IVmin 2.0, optional 1.6 * * * * * *
Applications
Automotive: Backlighting in dashboards and switches Telecommunication: Indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols
Parts Table
Part TLMS2000 TLMO2000 TLMY2000 Color, Luminous Intensity Red, IV = 4.5 mcd (typ.) Orange, IV = 9.0 mcd (typ.) Yellow, IV = 7.1 mcd (typ.) Angle of Half Intensity () 60 60 60 Technology AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified TLMS200. ,TLMO200. ,TLMY200. Parameter Reverse voltage DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Tamb 100 C tp 10 s Tamb 100 C Test condition Symbol VR IF IFSM PV Tj Tamb Value 5 15 0.1 40 125 - 40 to + 100 Unit V mA A mW C C
Document Number 83185 Rev. 1.1, 11-Dec-03
www.vishay.com 1
TLM.200.
Vishay Semiconductors
Parameter Storage temperature range Soldering temperature Thermal resistance junction/ ambient according to IPC 9501 mounted on PC board (pad size > 5 mm2) Test condition Symbol Tstg Tsd RthJA Value - 40 to + 100 245 580
VISHAY
Unit C C K/W
Optical and Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Red
TLMS200. Parameter Luminous intensity 1) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance
1)
Test condition IF = 2 mA IF = 2 mA IF = 2 mA IF = 2 mA IF = 2 mA IR = 10 A VR = 0, f = 1 MHz
Symbol IV d p VF VR Cj
Min 2
Typ. 4.5 630 643 60 1.8
Max
Unit mcd nm nm deg
2.2
V V pF
5 15
in one Packing Unit IVmax/IVmin 2.0
Orange
TLMO200. Parameter Luminous intensity 1) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance
1)
Test condition IF = 2 mA IF = 2 mA IF = 2 mA IF = 2 mA IF = 2 mA IR = 10 A VR = 0, f = 1 MHz
Symbol IV d p VF VR Cj
Min 4 598
Typ. 9 605 610 60 1.8
Max 611
Unit mcd nm nm deg
2.2
V V pF
5 15
in one Packing Unit IVmax/IVmin 2.0
Yellow
TLMY200. Parameter Luminous intensity 1) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance
1)
Test condition IF = 2 mA IF = 2 mA IF = 2 mA IF = 2 mA IF = 2 mA IR = 10 A VR = 0, f = 1 MHz
Symbol IV d p VF VR Cj
Min 3.2 581
Typ. 7.1 588 590 60 1.8
Max 594
Unit mcd nm nm deg
2.2
V V pF
5 15
in one Packing Unit IVmax/IVmin 2.0
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Document Number 83185 Rev. 1.1, 11-Dec-03
VISHAY
Typical Characteristics (Tamb = 25 C unless otherwise specified)
100
PV - Power Dissipation (mW)
TLM.200.
Vishay Semiconductors
100 Red
I F - Forward Current ( mA )
80 60 40 20 0
10
0
20
40
60
80
100
120
17509
1 1.0
1.5
2.0
2.5
3.0
18556
Tamb - Ambient Temperature ( C )
VF - Forward V oltage ( V )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
40
IVrel-Relative Luminous Intensity I F - Forward Current ( mA )
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0
17510
35 30 25 20 15 10 5 0 0 20 40 60 80 100 120
Red
IF = 20 mA
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C )
18557
Tamb - Ambient Temperature ( C )
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
0
I V re l - Relative Luminous Intensity
10
20
30
I Vrel - Relative Luminous Intensity
10 Red
1.0 0.9 0.8 0.7 0.6
40 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4
1
0.1
0.01 1
17511
10 IF - Forward Current ( mA )
100
95 10319
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Figure 6. Relative Luminous Intensity vs. Forward Current
Document Number 83185 Rev. 1.1, 11-Dec-03
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TLM.200.
Vishay Semiconductors
VISHAY
1.2 1.1 Red 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 610 620 630 640 650 660 670 680 690 700 - Wavelength ( nm )
1.6
I Vrel- Relative Luminous Intensity
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0
Orange
I rel - Relative Intensity
IF = 20 mA
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C )
17512
17504
Figure 7. Relative Intensity vs. Wavelength
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
2.10
I Vrel - Relative Luminous Intensity
10 Red Orange
2.05
VF - Forward Voltage ( V )
2.00 1.95 1.90 1.85 1.80 1.75 1.70 1.65 1.60 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) IF = 20 mA
1
0.1
0.01 1
17505
10 IF - Forward Current ( mA )
100
17513
Figure 8. Forward Voltage vs. Ambient Temperature
Figure 11. Relative Luminous Intensity vs. Forward Current
100 Orange
I F - Forward Current ( mA ) I rel - Relative Intensity
10
1 1.0
17503
1.5
2.0
2.5
3.0
17506
1.2 1.1 Orange 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 560 570 580 590 600 610 620 630 640 650 660 - Wavelength ( nm )
VF - Forward V oltage ( V )
Figure 9. Forward Current vs. Forward Voltage
Figure 12. Relative Intensity vs. Wavelength
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Document Number 83185 Rev. 1.1, 11-Dec-03
VISHAY
TLM.200.
Vishay Semiconductors
2.10
I Vrel - Relative Luminous Intensity
10 Orange Yellow
2.05
VF - Forward Voltage ( V )
2.00 1.95 1.90 1.85 1.80 1.75 1.70 1.65 1.60 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) IF = 20 mA
1
0.1
0.01 1
17501
10 IF - Forward Current ( mA )
100
17507
Figure 13. Forward Voltage vs. Ambient Temperature
Figure 16. Relative Luminous Intensity vs. Forward Current
100 Yellow
I F - Forward Current ( mA )
10
1 1.0
95 10878y
1.5
2.0
2.5
3.0
VF - Forward V oltage ( V )
1.2 1.1 Yellow 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 550 560 570 580 590 600 610 620 630 640 650 95 10881y l - Wavelength ( nm )
I rel - Relative Intensity
Figure 14. Forward Current vs. Forward Voltage
Figure 17. Relative Intensity vs. Wavelength
1.6
IVrel - Relative Luminous Intensity VF - Forward Voltage ( V )
2.15 Yellow 2.10 2.05 2.00 1.95 1.90 1.85 1.80 1.75 1.70 1.65 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C )
17502
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
Yellow
IF = 20 mA
IF = 20 mA
0
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C )
17508
Figure 15. Rel. Luminous Intensity vs. Ambient Temperature
Figure 18. Forward Voltage vs. Ambient Temperature
Document Number 83185 Rev. 1.1, 11-Dec-03
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TLM.200.
Vishay Semiconductors Package Dimensions in mm
VISHAY
16892
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Document Number 83185 Rev. 1.1, 11-Dec-03
VISHAY
Reel Dimensions
TLM.200.
Vishay Semiconductors
16938
Document Number 83185 Rev. 1.1, 11-Dec-03
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TLM.200.
Vishay Semiconductors Tape Dimensions
VISHAY
16939
Leader and Trailer
Trailer
no devices devices
Leader
no devices
End
min. 200 min. 400
Start
96 11818
GS08 = 3000 pcs
www.vishay.com 8 Document Number 83185 Rev. 1.1, 11-Dec-03
VISHAY
Cover Tape Peel Strength
According to DIN EN 60286-3 0.1 to 1.3 N 300 10 mm/min 165 - 180 peel angle
TLM.200.
Vishay Semiconductors Label
Standard bar code labels for finished goods The standard bar code labels are product labels and used for identification of goods. The finished goods are packed in final packing area. The standard packing units are labeled with standard bar code labels before transported as finished goods to warehouses. The labels are on each packing unit and contain Vishay Semiconductor GmbH specific data.
Vishay Semiconductor GmbH standard bar code product label (finished goods) Plain Writing Item-Description Item-Number Selection-Code LOT-/ Serial-Number Data-Code Plant-Code Quantity Accepted by: Packed by: Mixed Code Indicator Origin Long Bar Code Top Item-Number Plant-Code Sequence-Number Quantity Total Length Short Bar Code Bottom Selection-Code Data-Code Batch-Number Filter Total Length Abbreviation - INO SEL BATCH COD PTC QTY ACC PCK MIXED CODE xxxxxxx+ Type N N X N - Type X N X - - Length 18 8 3 10 3 (YWW) 2 8 - - - Company Logo Length 8 2 3 8 21 Length 3 3 10 1 17
16942
Document Number 83185 Rev. 1.1, 11-Dec-03
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TLM.200.
Vishay Semiconductors Dry Packing
The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage.
Aluminium bag
VISHAY
Label
Reel
17028
15973
Example of JESD22-A112 Level 2 label
ESD Precaution
Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the Antistatic Shielding Bag. Electro-Static Sensitive Devices warning labels are on the packaging.
Final Packing
The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes.
Recommended Method of Storage
Dry box storage is recommended as soon as the aluminium bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: * Storage temperature 10 C to 30 C * Storage humidity 60 % RH max. After more than 1 year under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 hours at 40 C + 5 C/ -0 C and < 5 % RH (dry air/ nitrogen) or 96 hours at 60 C +5 C and < 5 % RH for all device containers or 24 hours at 100 C +5 C not suitable for reel or tubes. An EIA JEDEC Standard JESD22-A112 Level 2 label is included on all dry bags.
Vishay Semiconductors Standard Bar-Code Labels
The Vishay Semiconductors standard bar-code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data.
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Document Number 83185 Rev. 1.1, 11-Dec-03
VISHAY
Assembly Instructions
Reflow Soldering * Reflow soldering must be done within 1 year stored under max. 30 C, 60 % RH after opening envelop * Recommended soldering paste (composition: SN 63 %, Pb 37 %) Melting temperature 178 C to 192 C * Apply solder paste to the specified soldering pads, by using a dispenser or by screen printing. * Recommended thickness of metal mask is 0.2 mm for screen printing. * The recommended reflow furnace is a combinationtype with upper and lower heaters. * Set the furnace temperatures for pre-heating and heating in accordance with the reflow temperature profile as shown below. Excercise extreme care to keep the maximum temperature below 230 C. The following temperature profile means the tempera ture at the device surface. Since temperature differ ence occurs between the work and the surface of the circuit board depending on the pes of circuit board or reflow furnace, the operating conditions should be verified prior to start of operation. * Handling after reflow should be done only after the work surface has been cooled off. Manual Soldering * Use the 6/4 solder or the solder containing silver. * Use a soldering iron of 25 W or smaller. Adjust the temperature of the soldering iron below 300 C. * Finish soldering within three seconds. * Handle products only after the temperature is cooled off. Cleaning * Perform cleaning after soldering strictly in conformance to the following conditions: Cleaning agent: 2-propanol (isopropyl alcohol) Commercially available grades (industrial use) should be used. Demineralized or distilled water having a resistivity of not less than 500 m corresponding to a conductivity of 2 mS/m. * Temperature and time: 30 seconds under the temperature below 50 C or 3 minutes below 30 C. * Ultrasonic cleaning: Below 20 W.
TLM.200.
Vishay Semiconductors Reflow Solder Profile
240 220 200 180 160 140 120 100 80 60 40 20 0 0
10 s max. @ 230 C
2 C - 4 C/s
Temperature ( C )
120 s - 180 s
90 s max
2 C - 4 C/s
50
100
150 200 250 Time ( s )
300
350
16944
Document Number 83185 Rev. 1.1, 11-Dec-03
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TLM.200.
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83185 Rev. 1.1, 11-Dec-03

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